| 1 |
Experimental study on the two-phase flow of gas-particles through a model brake valve
Zhang G, Zhang YF, Liu Q, Li Y, Lin Z
Powder Technology, 367, 172, 2020 |
| 2 |
The effect of interface-induced structural properties of the pentacene accumulation layer on the threshold voltage: Pentacene monolayer transistors
Park B
Thin Solid Films, 627, 53, 2017 |
| 3 |
Monolayer field effect transistor as a probe of electronic defects in organic semiconducting layers at organic/inorganic hetero-junction interface
Park B
Thin Solid Films, 598, 141, 2016 |
| 4 |
Evolution of Raman spectra in n-InAs wafer with annealing temperature
Deng HY, Guo JH, Zhang Y, Cong R, Hu GJ, Yu GL, Dai N
Applied Surface Science, 288, 40, 2014 |
| 5 |
The core-shell nature of nanostructured WO3 photoelectrodes demonstrated in spectroelectrochemical studies
Krolikowska A, Barczuk P, Jurczakowski R, Augustynski J
Journal of Electroanalytical Chemistry, 662(1), 229, 2011 |
| 6 |
Non-metallic effects in silicided gate MOSFETs
Rodriguez N, Gamiz F, Clerc R, Sampedro C, Godoy A, Ghibaudo G
Solid-State Electronics, 53(12), 1313, 2009 |
| 7 |
Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 48(5), 781, 2004 |
| 8 |
Interaction between oxygen and InAs(111) surfaces, influence of the electron accumulation layer
Leandersson KS, Gothelid M, Tjernberg O, Karlsson UO
Applied Surface Science, 212, 589, 2003 |
| 9 |
A simple quantum model for the MOS structure in accumulation mode
Vexler MI
Solid-State Electronics, 47(8), 1283, 2003 |
| 10 |
Lateral current spreading in SiC Schottky diodes using metal overlap edge termination
Zhang Q, Sudarshan TS
Solid-State Electronics, 45(10), 1847, 2001 |
