| 1 |
Laser-stimulated structural transformations in AlxGa1-xAs/GaAs system
Fedorenko L, Silenas A, Havryliuk O, Strilchuk O, Yukhymchuk V, Soloviev E, Korchovyi A, Sirmulis E
Thin Solid Films, 685, 34, 2019 |
| 2 |
Impact of the growth temperature on the performance of 1.70-eV Al0.22Ga0.78As solar cells grown by MBE
Onno A, Tang MC, Oberbeck L, Wu J, Liu HY
Journal of Crystal Growth, 475, 322, 2017 |
| 3 |
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
Ghadi H, Agarwal A, Adhikary S, Agawane J, Mandal A, Chakrabarti S, Pendyala NB, Prajapati S
Thin Solid Films, 566, 1, 2014 |
| 4 |
Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD
Mochizuki T, Tokumitsu Y, Fujii K, Cavallotti C
Journal of Crystal Growth, 273(3-4), 464, 2005 |
| 5 |
Determination of the E-1 and E-1+Delta(1) energy bands by photoreflectance in A1(x)Ga(1-x)As in the region 0 < x < 0.55
Saleh ABA, Glosser R
Thin Solid Films, 450(2), 290, 2004 |
| 6 |
Surface orientation dependency for AlGaAs growth rate with/without HC1 in MOCVD
Fujii K, Mochizuki T, Tokumitsu Y
Journal of Crystal Growth, 259(4), 327, 2003 |
| 7 |
Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N-2 and H-2
Dauelsberg M, Hardtdegen H, Kadinski L, Kaluza A, Kaufmann P
Journal of Crystal Growth, 223(1-2), 21, 2001 |
| 8 |
Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy
Almuneau G, Hall E, Mathis S, Coldren LA
Journal of Crystal Growth, 208(1-4), 113, 2000 |
| 9 |
Impurity incorporation of unintentionally doped AlxGa1-xAs during MOVPE
Fujii K, Kawamura K, Gotoh H
Journal of Crystal Growth, 221, 41, 2000 |
| 10 |
Influence of Zn introduction on Al(x)Ga(1-x)AS crystal growth by MOVPE
Fujii K, Kawamura K, Gotoh H
Journal of Crystal Growth, 221, 75, 2000 |
