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Two-dimensional recrystallisation processes of nanometric vanadium oxide thin films grown by atomic layer chemical vapor deposition (ALCVD) evidenced by AFM Groult H, Balnois E, Mantoux A, Le Van K, Lincot D Applied Surface Science, 252(16), 5917, 2006 |
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Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence Cheng HE, Lee WJ Materials Chemistry and Physics, 97(2-3), 315, 2006 |
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Effect of carbon on the thermal stability of a Si atomic layer on Ge(100) Fujiu M, Takahashi K, Sakuraba M, Murota J Applied Surface Science, 224(1-4), 206, 2004 |
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Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG Materials Science Forum, 457-460, 1369, 2004 |
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Si 기판에서 원자층 화학 기상 증착법으로 제조된 Al2O3 및 ZrO2 유전 박막의 결정학적 특성 및 계면 구조 평가 김중정, 양준모, 임관용, 조흥재, 김원, 박주철, 이순영, 김정선, 김근홍, 박대규 Korean Journal of Materials Research, 13(8), 497, 2003 |
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CuInS2-TiO2 heterojunctions solar cells obtained by atomic layer deposition Nanu M, Reijnen L, Meester B, Goossens A, Schoonman J Thin Solid Films, 431-432, 492, 2003 |
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Applications of Atomic Layer Chemical Vapor Deposition for the Processing of Nanolaminate Structures Yong K, Jeong J Korean Journal of Chemical Engineering, 19(3), 451, 2002 |