화학공학소재연구정보센터
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No. Article
1 Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates
Chen TL, Kou A, Ofan A, Gaathon O, Osgood RM, Gang O, Vanamurthy L, Bakhru S, Bakhru H
Thin Solid Films, 518(1), 269, 2009
2 Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine
Robinson DW, Rogers JW
Thin Solid Films, 372(1-2), 10, 2000
3 Initial stage of the catalyzed growth of SiO2 films on Si(001): An ab initio study
Okamoto Y
Journal of Physical Chemistry B, 103(50), 11074, 1999
4 Electrical properties of AlN thin films deposited at low temperature on Si(100)
Aardahl CL, Rogers JW, Yun HK, Ono Y, Tweet DJ, Hsu ST
Thin Solid Films, 346(1-2), 174, 1999
5 Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
Aarik J, Aidla A, Kiisler AA, Uustare T, Sammelselg V
Thin Solid Films, 340(1-2), 110, 1999