검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT Ren N, Hu H, Lyu XF, Wu JP, Xu HY, Li RG, Zuo Z, Wang K, Sheng K Solid-State Electronics, 152, 33, 2019 |
| 2 |
Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers Konstantinov A, Pham H, Lee B, Park KS, Kang B, Allerstam F, Neyer T Solid-State Electronics, 148, 51, 2018 |
| 3 |
Resistive Switching in Mott Insulators and Correlated Systems Janod E, Tranchant J, Corraze B, Querre M, Stoliar P, Rozenberg M, Cren T, Roditchev D, Phuoc VT, Besland MP, Cario L Advanced Functional Materials, 25(40), 6287, 2015 |
| 4 |
Off-state avalanche-breakdown-induced on-resistance degradation in SGO-NLDMOS Zhang SF, Han Y, Ding KB, Hu JX, Zhang B, Zhang W, Wu HT Solid-State Electronics, 81, 27, 2013 |
| 5 |
High-field anodization of aluminum in concentrated acid solutions and at higher temperatures Song Y, Jiang LF, Qi WX, Lu C, Zhu XF, Jia HB Journal of Electroanalytical Chemistry, 673, 24, 2012 |
| 6 |
Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes du Plessis M, Rademeyer P Solid-State Electronics, 54(4), 433, 2010 |
| 7 |
Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition Xu Q, Ra Y, Bachman M, Li GP Journal of Vacuum Science & Technology A, 27(1), 145, 2009 |
| 8 |
Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour Donoval D, Vrbicky A, Marek J, Chvala A, Beno P Solid-State Electronics, 52(6), 892, 2008 |
| 9 |
Fast speed pore formation via strong oxidizers Bao XQ, Jiao JW, Zhou J, Wang YL Electrochimica Acta, 52(24), 6728, 2007 |
| 10 |
Observation of abrupt first-order metal-insulator transition in Be-doped GaAs Kim HT, Youn DH, Chae BG, Kang KY, Lim YS Journal of Crystal Growth, 301, 252, 2007 |