검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier Lee HJ, Jang IK, An WC, Kwac LK, Kim HG, Kwak JS Current Applied Physics, 17(12), 1582, 2017 |
| 2 |
The influence of InGaP barrier layer on the characteristics of 1.3 mu m strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes Lee CY, Jiang WJ, Wu MC, Ho WJ Solid-State Electronics, 46(9), 1389, 2002 |
| 3 |
Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells Mitsuhara M, Ogasawara M, Sugiura H Journal of Crystal Growth, 210(4), 463, 2000 |