검색결과 : 46건
| No. | Article |
|---|---|
| 1 |
Engineering sulfur vacancies in basal plane of MoS2 for enhanced hydrogen evolution reaction Geng S, Yang WW, Liu YQ, Yu YS Journal of Catalysis, 391, 91, 2020 |
| 2 |
SnS2 quantum dots growth on MoS2: Atomic-level heterostructure for electrocatalytic hydrogen evolution Ali T, Wang XF, Tang K, Li Q, Sajjad S, Khan S, Farooqi SA, Yan CL Electrochimica Acta, 300, 45, 2019 |
| 3 |
Field emission characteristics of basal plane and cross-sectional edges of graphite made from graphite oxide Wang XY, Yan ZZ, Tao ZC, Tan ZQ, Ye JL, Pan F, Xu HL, Zhang Y, Deng SZ, Zhu YW Materials Chemistry and Physics, 209, 60, 2018 |
| 4 |
Work function modifications of graphite surface via oxygen plasma treatment Duch J, Kubisiak P, Adolfsson KH, Hakkarainen M, Golda-Cepa M, Kotarba A Applied Surface Science, 419, 439, 2017 |
| 5 |
Spectral induced polarization of Na-montmorillonite dispersions Leroy P, Weigand M, Meriguet G, Zimmermann E, Tournassat C, Fagerlund F, Kemna A, Huisman JA Journal of Colloid and Interface Science, 505, 1093, 2017 |
| 6 |
Characterization of Basal Plane Dislocations in PVT-Grown SiC by Transmission Electron Microscopy Jeong M, Kim DY, Hong SK, Lee JY, Yeo IG, Eun TH, Chun MC Korean Journal of Materials Research, 26(11), 656, 2016 |
| 7 |
Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M Journal of Crystal Growth, 418, 7, 2015 |
| 8 |
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC Song HZ, Sudarshan TS Journal of Crystal Growth, 371, 94, 2013 |
| 9 |
Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers Song HZ, Rana T, Sudarshan TS Journal of Crystal Growth, 320(1), 95, 2011 |
| 10 |
Surface force measurements at the basal planes of ordered kaolinite particles Gupta V, Miller JD Journal of Colloid and Interface Science, 344(2), 362, 2010 |