검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Characterization of Basal Plane Dislocations in PVT-Grown SiC by Transmission Electron Microscopy Jeong M, Kim DY, Hong SK, Lee JY, Yeo IG, Eun TH, Chun MC Korean Journal of Materials Research, 26(11), 656, 2016 |
| 2 |
Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M Journal of Crystal Growth, 418, 7, 2015 |
| 3 |
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC Song HZ, Sudarshan TS Journal of Crystal Growth, 371, 94, 2013 |
| 4 |
Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers Song HZ, Rana T, Sudarshan TS Journal of Crystal Growth, 320(1), 95, 2011 |
| 5 |
The benefits and current progress of SiC SGTOs for pulsed power applications Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V Solid-State Electronics, 54(10), 1232, 2010 |
| 6 |
Improvement of SiC wafer warp by annealing Sasaki M, Harada S, Okamoto Y, Miyanagi Y, Shiomi H Materials Science Forum, 457-460, 829, 2004 |