| 1 |
Effect of carbonization in bias-enhanced nucleation step during highly-oriented growth of diamond films on 6H-SiC(0001) substrate
Seo SH, Lee TH, Park JS, Song JS, Oh MH
Materials Science Forum, 457-460, 321, 2004 |
| 2 |
Growth of highly-oriented diamond films on 6H-SiC (0001) and Si (111) substrates and the effect of carburization
Lee TH, Seo SH, Kang SM, Park JS
Thin Solid Films, 447, 231, 2004 |
| 3 |
Comparison of classical and BEN nucleation studied on thinned Si(111) samples: a HRTEM study
Arnault JC, Pecoraro S, Le Normand F, Werckmann J
Applied Surface Science, 212, 912, 2003 |
| 4 |
Effect of bias-enhancement in diamond nucleation and growth on nickel
Hayashi Y, Shiraokawa N, Nishino S
Thin Solid Films, 374(2), 268, 2000 |
| 5 |
The nucleation of highly oriented diamond on silicon using a negative bias
Kim YK, Lee KH, Lee MJ, Lee JY
Thin Solid Films, 341(1-2), 211, 1999 |
| 6 |
Fabrication of gated diamond field emitter array using a selective diamond growth process
Ha SC, Kang DH, Kim KB, Min SH, Kim IH, Lee JD
Thin Solid Films, 341(1-2), 216, 1999 |
| 7 |
Diamond nucleation using a pulsed high-temperature and high-density CH4-plasma beam
Zhang HX, Lin Z, Jiang YB, Feng KA, Yang SZ
Journal of Materials Science Letters, 17(18), 1515, 1998 |
| 8 |
Diamond nucleation on nonscratched Si substrate pretreated by pulsed high-temperature and high-density CH4-plasma beam
Jiang YB, Zhang HX, Liu CZ, Liu B, Lin ZD, Wu C, Yang SZ
Journal of Vacuum Science & Technology A, 16(5), 3138, 1998 |
| 9 |
A quasi-equilibrium model for the prediction of interlayer chemistry during diamond chemical vapor deposition
Mahalingam P, Dandy DS
Thin Solid Films, 322(1-2), 108, 1998 |
| 10 |
Growth and characterization of diamond films deposited by dc discharge assisted hot filament chemical vapor deposition
Cui JB, Shang NG, Liao Y, Li JQ, Fang RC
Thin Solid Films, 334(1-2), 156, 1998 |
