화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Rodriguez N, Tienda-Luna IM, Martinez-Carricondo F, Biel B
Solid-State Electronics, 65-66, 88, 2011
2 Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current
Ferrier M, Clerc R, Ghibaudo G, Boeuf F, Skotnicki T
Solid-State Electronics, 50(1), 69, 2006