검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Excellent passivation with implied open-circuit voltage of 710 mV for p-type multi-crystalline black silicon using PECVD grown a-Si:H passivation layer Lin YR, Feng MM, Wang ZX, Zeng YH, Liao MD, Gong LF, Yan BJ, Yuan ZZ, Ye JC Solar Energy, 211, 753, 2020 |
| 2 |
Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density Chae H, Shin S, Choi J, Seo S Current Applied Physics, 15(11), 1412, 2015 |
| 3 |
MOS hydrogen sensor with very fast response based on ulitra-thin thermal SiO2 film Lu C, Chen Z International Journal of Hydrogen Energy, 35(22), 12561, 2010 |
| 4 |
Trapping properties of sputtered hafnium oxide films: Bulk traps vs. interface traps Verrelli E, Galanopoulos G, Zouboulis I, Tsoukalas D Thin Solid Films, 518(19), 5579, 2010 |
| 5 |
Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress Samanta P Solid-State Electronics, 52(2), 255, 2008 |