검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer Xia SH, Liu L, Kong YK, Diao Y Chemical Physics Letters, 663, 90, 2016 |
| 2 |
Morphology evolvement of CeO2 cap layer for coated conductors Xia YD, Xiong J, Zhang F, Xue Y, Wang LL, Guo P, Xu PJ, Zhao XH, Tao BW Applied Surface Science, 263, 508, 2012 |
| 3 |
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN Placidi M, Perez-Tomas A, Constant A, Rius G, Mestres N, Millan J, Godignon P Applied Surface Science, 255(12), 6057, 2009 |
| 4 |
Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique Gui D, Mo ZQ, Xing ZX, Huang YH, Hua YN, Zhao SP, Cha LZ Applied Surface Science, 255(4), 1437, 2008 |
| 5 |
Mechanical stability of poly-Si TFT on metal foil Cheon JH, Bae JH, Jang J Solid-State Electronics, 52(3), 473, 2008 |
| 6 |
Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y Applied Surface Science, 224(1-4), 104, 2004 |
| 7 |
Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Nguyen D, Hogan K, Blew A, Cordes M Journal of Crystal Growth, 272(1-4), 59, 2004 |
| 8 |
Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs Song YJ, Lim JW, Kim SH, Bae HC, Kang JY, Park KW, Shim KH Solid-State Electronics, 46(11), 1983, 2002 |
| 9 |
Fabrication of Self-Aligned GaAs/AlGaAs and GaAs/InGaP Microwave-Power Heterojunction Bipolar-Transistors Ren F, Lothian JR, Pearton SJ, Abernathy CR, Wisk PW, Fullowan TR, Tseng B, Chu SN, Chen YK, Yang LW, Fu ST, Brozovich RS, Lin HH, Henning CL, Henry T Journal of Vacuum Science & Technology B, 12(5), 2916, 1994 |