화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
Kutsuki K, Watanabe Y, Yamashita Y, Soejima N, Kataoka K, Onishi T, Yamamoto K, Fujiwara H
Solid-State Electronics, 157, 12, 2019
2 Optical modeling of free electron behavior in highly doped ZnO films
Ruske F, Pflug A, Sittinger V, Szyszka B, Greiner D, Rech B
Thin Solid Films, 518(4), 1289, 2009
3 The role of threading dislocations in the physical properties of GaN and its alloys
Speck JS
Materials Science Forum, 353-356, 769, 2001
4 Bandstructure and transport properties of 4H-and 6H-SiC: Optically detected cyclotron resonance investigations
Meyer BK, Hofmann DM, Volm D, Chen WM, Son NT, Janzen E
Materials Science Forum, 338-3, 559, 2000
5 Phonon drag in GIC based on disordered graphite
Matzui L, Ovsienko I, Vovchenko L
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 340, 319, 2000