검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits Matsuura K, Tanimoto Y, Saito A, Miyaoku Y, Mizoguchi T, Miura-Mattausch M, Mattausch HJ Solid-State Electronics, 153, 59, 2019 |
| 2 |
Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In, Ga)Se-2 Berenguier B, Barreau N, Jaffre A, Ory D, Guillemoles JF, Kleider JP, Lombez L Thin Solid Films, 669, 520, 2019 |
| 3 |
Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy Gaubas E, Ceponis T, Dobrovolskas D, Mickevicius J, Pavlov J, Rumbauskas V, Vaitkus JV, Alimov N, Otajonov S Thin Solid Films, 660, 231, 2018 |
| 4 |
Verification of minority carrier traps in Cu(In,Ga)Se-2 and Cu2ZnSnSe4 by means of time-resolved photoluminescence Maiberg M, Holscher T, Jarzembowski E, Hartnauer S, Zahedi-Azad S, Franzel W, Scheer R Thin Solid Films, 633, 208, 2017 |
| 5 |
Barrier capacitance characteristics of CdS-Cu2S junction structures Gaubas E, Brytavskyi I, Ceponis T, Kusakovskij J, Tamulaitis G Thin Solid Films, 531, 131, 2013 |
| 6 |
Measurement and device simulation of avalanche breakdown in high-voltage 4H-SiC diodes including the influence of macroscopic defects Domeij M, Brunahl H, Ostling M Materials Science Forum, 389-3, 1277, 2002 |
| 7 |
Simulations of high-voltage 4H-SiC p(+)nn(+) diodes using a transient model for the deep boron level Domeij M, Zimmermann U, Aberg D, Ostermann J, Hallen A, Ostling M Materials Science Forum, 433-4, 847, 2002 |
| 8 |
Photoinduced metastability and degradation of poly[methyl(phenyl)silylene] as seen by thermoluminescence Kadashchuk A, Nespurek S, Ostapenko N, Skryshevskii Y, Zaika V Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 355, 413, 2001 |
| 9 |
Dynamic avalanche and trapped charge in 4H-SiC diodes Domeij M, Breitholtz B, Aberg D, Martinez A, Bergman P Materials Science Forum, 338-3, 1327, 2000 |