검색결과 : 12건
No. | Article |
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1 |
On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration de Souza M, Flandre D, Doria RT, Trevisoli R, Pavanello MA Solid-State Electronics, 117, 152, 2016 |
2 |
A high isolation W-band MMIC drain type cascode single balanced mixer Lee SJ, Baek TJ, Han M, Choi SG, Ko DS, Kim SD, Rhee JK Current Applied Physics, 12(3), 773, 2012 |
3 |
Small-signal modeling of MOSFET cascode with merged diffusion Yun Y, Jhon HS, Jeon J, Lee J, Shin H Solid-State Electronics, 53(5), 520, 2009 |
4 |
A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area Cho SI, Jeong HG, Shin HK, Kim YH Current Applied Physics, 7(1), 92, 2007 |
5 |
Performance of SiC Cascode Switches with Si MOS Gate Brezeanu G, Boianceanu C, Brezeanu M, Mihaila A, Udrea F, Amaratunga G Materials Science Forum, 483, 825, 2005 |
6 |
On the optimization and design of SiGeHBT cascode low-noise amplifiers Liang QQ, Niu GF, Cressler JD, Taylor S, Harame DL Solid-State Electronics, 49(3), 329, 2005 |
7 |
BIFET - a novel bipolar SiC switch for high voltage power electronics Mitlehner H, Friedrichs P, Elpelt R, Dohnke KO, Schorner R, Stephani D Materials Science Forum, 457-460, 1245, 2004 |
8 |
A numerical comparison between MOS control and junction control high voltage devices in SiC technology Mihaila A, Udrea F, Brezeanu G, Amaratunga G Solid-State Electronics, 47(4), 607, 2003 |
9 |
Unipolar and bipolar SiC integral cascoded switches with MOS and junction gate - Simulation study Bakowski M, Gustafsson U Materials Science Forum, 389-3, 1321, 2002 |
10 |
Analysis of unipolar and bipolar cascoded switches with MOS gate Bakowski M Materials Science Forum, 433-4, 801, 2002 |