화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration
de Souza M, Flandre D, Doria RT, Trevisoli R, Pavanello MA
Solid-State Electronics, 117, 152, 2016
2 A high isolation W-band MMIC drain type cascode single balanced mixer
Lee SJ, Baek TJ, Han M, Choi SG, Ko DS, Kim SD, Rhee JK
Current Applied Physics, 12(3), 773, 2012
3 Small-signal modeling of MOSFET cascode with merged diffusion
Yun Y, Jhon HS, Jeon J, Lee J, Shin H
Solid-State Electronics, 53(5), 520, 2009
4 A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area
Cho SI, Jeong HG, Shin HK, Kim YH
Current Applied Physics, 7(1), 92, 2007
5 Performance of SiC Cascode Switches with Si MOS Gate
Brezeanu G, Boianceanu C, Brezeanu M, Mihaila A, Udrea F, Amaratunga G
Materials Science Forum, 483, 825, 2005
6 On the optimization and design of SiGeHBT cascode low-noise amplifiers
Liang QQ, Niu GF, Cressler JD, Taylor S, Harame DL
Solid-State Electronics, 49(3), 329, 2005
7 BIFET - a novel bipolar SiC switch for high voltage power electronics
Mitlehner H, Friedrichs P, Elpelt R, Dohnke KO, Schorner R, Stephani D
Materials Science Forum, 457-460, 1245, 2004
8 A numerical comparison between MOS control and junction control high voltage devices in SiC technology
Mihaila A, Udrea F, Brezeanu G, Amaratunga G
Solid-State Electronics, 47(4), 607, 2003
9 Unipolar and bipolar SiC integral cascoded switches with MOS and junction gate - Simulation study
Bakowski M, Gustafsson U
Materials Science Forum, 389-3, 1321, 2002
10 Analysis of unipolar and bipolar cascoded switches with MOS gate
Bakowski M
Materials Science Forum, 433-4, 801, 2002