검색결과 : 2건
No. | Article |
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1 |
A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs Tomaszewski D, Gluszko G, Kucharski K, Malesinska J Solid-State Electronics, 159, 184, 2019 |
2 |
Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs Sheu CJ, Jang SL Solid-State Electronics, 47(4), 705, 2003 |