| 1 |
자기조립 단분자막의 알킬사슬 길이에 따른 고분자 박막 트랜지스터의 전하트랩 밀도 제어
박준화, 최유라, 민보연, 문준영, 이재원, 장현수, 박영돈
Polymer(Korea), 43(4), 553, 2019 |
| 2 |
Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors
Bak JY, Kim SJ, Byun CW, Pi JE, Ryu MK, Hwang CS, Yoon SM
Solid-State Electronics, 111, 153, 2015 |
| 3 |
Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory
Park S, Choi S, Jun KS, Kim H, Rhee S, Park YJ
Solid-State Electronics, 113, 144, 2015 |
| 4 |
Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application
Bae JH, Hwang JE, Kim HD, Zhang X, Park J
Molecular Crystals and Liquid Crystals, 600(1), 28, 2014 |
| 5 |
Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method
Liao JH, Lin HJ, Lue HT, Du PY, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY
Solid-State Electronics, 81, 51, 2013 |
| 6 |
Charge-based nonvolatile memory: Near the end of the roadmap?
Van Houdt J
Current Applied Physics, 11(2), E21, 2011 |
| 7 |
Comprehensive numerical simulation of threshold-voltage transients in nitride memories
Mauri A, Amoroso SM, Compagnoni CM, Maconi A, Spinelli AS
Solid-State Electronics, 56(1), 23, 2011 |
| 8 |
Investigation of charge-trap memories with AlN based band engineered storage layers
Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B
Solid-State Electronics, 58(1), 68, 2011 |
| 9 |
Electrical characteristics of a ZrO2/SiO2 modified tunnel barrier for low-temperature non-volatile memory
You HW, Cho WJ
Thin Solid Films, 519(10), 3397, 2011 |
| 10 |
Barrier engineering in metal-aluminum oxide-nitride-oxide-silicon (MANOS) flash memory: Invited
Kang CY
Current Applied Physics, 10(1), E27, 2010 |
