검색결과 : 11건
No. | Article |
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1 |
Plasma polymerization of C4Cl6 and C2H2Cl4 at atmospheric pressure Hubert J, Poleunis C, Delcorte A, Laha P, Bossert J, Lambeets S, Ozkan A, Bertrand P, Terryn H, Reniers F Polymer, 54(16), 4085, 2013 |
2 |
Chlorine dopants in plasma synthesized heteroaromatic polymers Vasquez M, Cruz GJ, Olayo MG, Timoshina T, Morales J, Olayo R Polymer, 47(23), 7864, 2006 |
3 |
Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films Cho HS, Sakuraba M, Murota J Thin Solid Films, 508(1-2), 301, 2006 |
4 |
Volume and heterogeneous chemistry of active species in chlorine plasma Efremov AM, Kim DP, Kim CI Thin Solid Films, 435(1-2), 83, 2003 |
5 |
On mechanisms of argon addition influence on etching rate in chlorine plasma Efremov AM, Kim DP, Kim CI Thin Solid Films, 435(1-2), 232, 2003 |
6 |
Effects of carbon monoxide addition to chlorine plasma-treated platinum films Kim JH, Woo SI Applied Surface Science, 156(1-4), 9, 2000 |
7 |
Temperature-Dependent Electron-Cyclotron-Resonance Etching of InP, Gap, and GaAs Shul RJ, Howard AJ, Vartuli CB, Barnes PA, Seng W Journal of Vacuum Science & Technology A, 14(3), 1102, 1996 |
8 |
In-Situ Fiber Optic Thermometry of Wafer Surface Etched with an Electron-Cyclotron-Resonance Source Thomas S, Berg EW, Pang SW Journal of Vacuum Science & Technology B, 14(3), 1807, 1996 |
9 |
High-Temperature Kinetic-Study for the Reactive Ion Etching of InP in BCl3/Ar/O-2 Demos AT, Fogler HS, Fournier J, Elta ME AIChE Journal, 41(3), 658, 1995 |
10 |
Effect of Substrate-Temperature on Dry-Etching of InP, GaAs, and AlGaAs in Iodine-Based and Bromine-Based Plasmas Chakrabarti UK, Ren F, Pearton SJ, Abernathy CR Journal of Vacuum Science & Technology A, 12(4), 1129, 1994 |