화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Plasma polymerization of C4Cl6 and C2H2Cl4 at atmospheric pressure
Hubert J, Poleunis C, Delcorte A, Laha P, Bossert J, Lambeets S, Ozkan A, Bertrand P, Terryn H, Reniers F
Polymer, 54(16), 4085, 2013
2 Chlorine dopants in plasma synthesized heteroaromatic polymers
Vasquez M, Cruz GJ, Olayo MG, Timoshina T, Morales J, Olayo R
Polymer, 47(23), 7864, 2006
3 Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1-xGex epitaxial films
Cho HS, Sakuraba M, Murota J
Thin Solid Films, 508(1-2), 301, 2006
4 Volume and heterogeneous chemistry of active species in chlorine plasma
Efremov AM, Kim DP, Kim CI
Thin Solid Films, 435(1-2), 83, 2003
5 On mechanisms of argon addition influence on etching rate in chlorine plasma
Efremov AM, Kim DP, Kim CI
Thin Solid Films, 435(1-2), 232, 2003
6 Effects of carbon monoxide addition to chlorine plasma-treated platinum films
Kim JH, Woo SI
Applied Surface Science, 156(1-4), 9, 2000
7 Temperature-Dependent Electron-Cyclotron-Resonance Etching of InP, Gap, and GaAs
Shul RJ, Howard AJ, Vartuli CB, Barnes PA, Seng W
Journal of Vacuum Science & Technology A, 14(3), 1102, 1996
8 In-Situ Fiber Optic Thermometry of Wafer Surface Etched with an Electron-Cyclotron-Resonance Source
Thomas S, Berg EW, Pang SW
Journal of Vacuum Science & Technology B, 14(3), 1807, 1996
9 High-Temperature Kinetic-Study for the Reactive Ion Etching of InP in BCl3/Ar/O-2
Demos AT, Fogler HS, Fournier J, Elta ME
AIChE Journal, 41(3), 658, 1995
10 Effect of Substrate-Temperature on Dry-Etching of InP, GaAs, and AlGaAs in Iodine-Based and Bromine-Based Plasmas
Chakrabarti UK, Ren F, Pearton SJ, Abernathy CR
Journal of Vacuum Science & Technology A, 12(4), 1129, 1994