검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
N-type doping of GaN/Si(111) using Al0.2Ga0.8N/ALN composite buffer layer and Al0.2Ga0.8N/GaN superlattice Kim DW, Lee CR Journal of Crystal Growth, 286(2), 235, 2006 |
| 2 |
The influence of AlxGa1-xN intermediate buffer layer on the characteristics of GaN/Si(111) epitaxy Jang SH, Lee SS, Lee OY, Lee CR Journal of Crystal Growth, 255(3-4), 220, 2003 |