화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method
Stockmeier L, Kranert C, Raming G, Miller A, Reimann C, Rudolph P, Friedrich J
Journal of Crystal Growth, 491, 57, 2018
2 Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
Taishi T, Ohno Y, Yonenaga I
Journal of Crystal Growth, 393, 42, 2014
3 One-dimensional Stefan problem formulation for solidification of nanostructure-enhanced phase change materials (NePCM)
El Hasadi YMF, Khodadadi JM
International Journal of Heat and Mass Transfer, 67, 202, 2013
4 Cellular structures in Czochralski-grown SiGe bulk crystal
Yonenaga I, Taishi T, Ohno Y, Tokumoto Y
Journal of Crystal Growth, 312(8), 1065, 2010
5 Directional solidification of binary melts with a non-equilibrium mushy layer
Aseev DL, Alexandrov DV
International Journal of Heat and Mass Transfer, 49(25-26), 4903, 2006
6 Microstructure development in single crystal welds
Vitek JM, Babu SS, David SA, Park JW
Materials Science Forum, 426-4, 4123, 2003
7 Directional solidification of InxGa1-xAs
Hashio K, Tatsumi M, Kato H, Kinoshita K
Journal of Crystal Growth, 210(4), 471, 2000