| 1 |
Role of ethylenediamine additive in Cu growth on a Co/SiO2/Si substrate via electrochemical atomic layer deposition of Pb and its surface limited redox replacement
Wu JL, Fang JS
Applied Surface Science, 477, 280, 2019 |
| 2 |
Annealing-free copper source-drain electrodes based on copper-calcium diffusion barrier for amorphous silicon thin film transistor
Yu ZN, Xue JS, Yao Q, Hui GB, Jiang YR, Xue W
Thin Solid Films, 624, 106, 2017 |
| 3 |
Rapid screening of plating additives for bottom-up metallization of nano-scale features
Boehme L, Landau U
Journal of Applied Electrochemistry, 46(1), 39, 2016 |
| 4 |
Tungsten doped indium oxide film: Ready for bifacial copper metallization of silicon heterojunction solar cell
Yu J, Bian JT, Duan WY, Liu YC, Shi JH, Meng FY, Liu ZX
Solar Energy Materials and Solar Cells, 144, 359, 2016 |
| 5 |
Advanced characterisation of thermo-mechanical fatigue mechanisms of different copper film systems for wafer metallizations
Bigl S, Wurster S, Cordill MJ, Kiener D
Thin Solid Films, 612, 153, 2016 |
| 6 |
The role of oxygen in the deposition of copper-calcium thin film as diffusion barrier for copper metallization
Yu ZN, Ren RH, Xue JS, Yao Q, Li ZL, Hui GB, Xue W
Applied Surface Science, 328, 374, 2015 |
| 7 |
Ultrathin cobalt-alloyed barrier layers for copper metallization by a new seeding and electroless-deposition process
Chen ST, Liu YY, Chen GS
Applied Surface Science, 354, 144, 2015 |
| 8 |
The reliability study of III-V solar cell with copper based contacts
Hsu CH, Chang EY, Chang HJ, Maa JS, Pande K
Solid-State Electronics, 114, 174, 2015 |
| 9 |
Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization
Zhou YM, He MZ, Xie Z
Applied Surface Science, 315, 353, 2014 |
| 10 |
Nucleation and Growth of Cu Electrodeposited Directly on W Diffusion Barrier in Neutral Electrolyte
Im B, Kim S
Electrochimica Acta, 130, 52, 2014 |
