화학공학소재연구정보센터
검색결과 : 36건
No. Article
1 Oxygen vacancy mediated single unit cell Bi2WO6 by Ti doping for ameliorated photocatalytic performance
Arif M, Zhang M, Mao Y, Bu QX, Ali A, Qin Z, Muhmood T, Shahnoor, Liu XH, Zhou BJ, Chen SM
Journal of Colloid and Interface Science, 581, 276, 2021
2 Effect of substrate defects on LIDT of (BiTm)(3)(GaFe)(5)O-12 films grown by LPE
Zhang D, Yang QH, Wang M, Du SS, Jiang Y, Syvorotka II, Zhang HW
Applied Surface Science, 484, 169, 2019
3 Study on the effect of some surface phenomena on the properties of citrate capped cobalt doped ferrites
Puscasu E, Sacarescu L, Popescu-Lipan L, Nica V, Grigoras M, Domocos A, Lupu N, Creanga D
Applied Surface Science, 483, 1182, 2019
4 Crystal defects of Li2MoO4 scintillators grown by Bridgman method
Chen P, Wei R, Jiang LW, Yang SS, Chen YP, Wang ZH, Yu HH, Chen HB
Journal of Crystal Growth, 500, 80, 2018
5 Growth temperature dependent strain in relaxed Ge microcrystals
Meduna M, Falub CV, Isa F, von Kanel H
Thin Solid Films, 664, 115, 2018
6 Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
Matsukawa T, Liu YX, Mori T, Morita Y, Otsuka S, O'uchi S, Fuketa H, Migita S, Masahara M
Solid-State Electronics, 132, 103, 2017
7 Partial Blockage of the Reversible Solid-Solid Transition of Strontium Succinate
Couvrat N, Martins D, Lafontaine A, Sanselme M, Dupray V, Taulelle P, Lerestif JM, Lynch M, Vaysse-Ludot L, Coquerel G
Chemical Engineering & Technology, 39(7), 1224, 2016
8 Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots
Trempa M, Beier M, Reimann C, Rosshirth K, Friedrich J, Lobel C, Sylla L, Richter T
Journal of Crystal Growth, 454, 6, 2016
9 Growth Rate Dispersion at the Single-Crystal Level
Bobo E, Petit S, Coquerel G
Chemical Engineering & Technology, 38(6), 1011, 2015
10 The effect of microstructure and crystal defect on electrochemical performances of MgO nanobelts
Li HJ, Li MJ, Guo WL, Wang XF, Ge C, Yang BH
Electrochimica Acta, 123, 103, 2014