검색결과 : 36건
No. | Article |
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1 |
Oxygen vacancy mediated single unit cell Bi2WO6 by Ti doping for ameliorated photocatalytic performance Arif M, Zhang M, Mao Y, Bu QX, Ali A, Qin Z, Muhmood T, Shahnoor, Liu XH, Zhou BJ, Chen SM Journal of Colloid and Interface Science, 581, 276, 2021 |
2 |
Effect of substrate defects on LIDT of (BiTm)(3)(GaFe)(5)O-12 films grown by LPE Zhang D, Yang QH, Wang M, Du SS, Jiang Y, Syvorotka II, Zhang HW Applied Surface Science, 484, 169, 2019 |
3 |
Study on the effect of some surface phenomena on the properties of citrate capped cobalt doped ferrites Puscasu E, Sacarescu L, Popescu-Lipan L, Nica V, Grigoras M, Domocos A, Lupu N, Creanga D Applied Surface Science, 483, 1182, 2019 |
4 |
Crystal defects of Li2MoO4 scintillators grown by Bridgman method Chen P, Wei R, Jiang LW, Yang SS, Chen YP, Wang ZH, Yu HH, Chen HB Journal of Crystal Growth, 500, 80, 2018 |
5 |
Growth temperature dependent strain in relaxed Ge microcrystals Meduna M, Falub CV, Isa F, von Kanel H Thin Solid Films, 664, 115, 2018 |
6 |
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation Matsukawa T, Liu YX, Mori T, Morita Y, Otsuka S, O'uchi S, Fuketa H, Migita S, Masahara M Solid-State Electronics, 132, 103, 2017 |
7 |
Partial Blockage of the Reversible Solid-Solid Transition of Strontium Succinate Couvrat N, Martins D, Lafontaine A, Sanselme M, Dupray V, Taulelle P, Lerestif JM, Lynch M, Vaysse-Ludot L, Coquerel G Chemical Engineering & Technology, 39(7), 1224, 2016 |
8 |
Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots Trempa M, Beier M, Reimann C, Rosshirth K, Friedrich J, Lobel C, Sylla L, Richter T Journal of Crystal Growth, 454, 6, 2016 |
9 |
Growth Rate Dispersion at the Single-Crystal Level Bobo E, Petit S, Coquerel G Chemical Engineering & Technology, 38(6), 1011, 2015 |
10 |
The effect of microstructure and crystal defect on electrochemical performances of MgO nanobelts Li HJ, Li MJ, Guo WL, Wang XF, Ge C, Yang BH Electrochimica Acta, 123, 103, 2014 |