화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Interfacial self-assembly of polysaccharide rods and platelets bridging over capillary lengths
Joshi G, Okeyoshi K, Yusof FAA, Mitsumata T, Okajima MK, Kaneko T
Journal of Colloid and Interface Science, 591, 483, 2021
2 Ferroelectric Switching and Electrochemistry of Pyrrole Substituted Trialkylbenzene-1,3,5-Tricarboxamides
Meng X, Gorbunov AV, Roelofs WSC, Meskers SCJ, Janssen RAJ, Kemerink M, Sijbesma RP
Journal of Polymer Science Part B: Polymer Physics, 55(8), 673, 2017
3 Analysis and optimization of Czochralski laser oxide crystal growth
Fang HS, Lin JZ, Zheng LL, Huang XM
International Journal of Heat and Mass Transfer, 85, 505, 2015
4 Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot
Li ZY, Liu LJ, Liu X, Zhang YF, Xiong JF
Journal of Crystal Growth, 360, 87, 2012
5 Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals
Noghabi OA, M'Hamdi M, Jomaa M
Journal of Crystal Growth, 318(1), 173, 2011
6 Impact of the surface/interface on the ionic conductivity of thin film Gd-doped CeO2
Swanson M, Sunder M, Tangtrakarn N, Krishna L, Moran PD
Solid State Ionics, 189(1), 45, 2011
7 Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO
Seo SH, Nam WS, Kim JS, Lee SY, Shim TH, Park JG
Current Applied Physics, 10(1), E32, 2010
8 Influence of the molecular weight of a polymer on the gliding of nematic liquid crystals
Janossy I, Vajda A, Statman D
Molecular Crystals and Liquid Crystals, 466, 77, 2007
9 Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of radial temperature gradient
Herro Z, Bickermann M, Epelbaum BM, Masri P, Winnacker A
Materials Science Forum, 433-4, 67, 2002
10 Influence of melt convection on the interface during Czochralski crystal growth
Miller W, Rehse U, Bottcher K
Solid-State Electronics, 44(5), 825, 2000