1 |
Interfacial self-assembly of polysaccharide rods and platelets bridging over capillary lengths Joshi G, Okeyoshi K, Yusof FAA, Mitsumata T, Okajima MK, Kaneko T Journal of Colloid and Interface Science, 591, 483, 2021 |
2 |
Ferroelectric Switching and Electrochemistry of Pyrrole Substituted Trialkylbenzene-1,3,5-Tricarboxamides Meng X, Gorbunov AV, Roelofs WSC, Meskers SCJ, Janssen RAJ, Kemerink M, Sijbesma RP Journal of Polymer Science Part B: Polymer Physics, 55(8), 673, 2017 |
3 |
Analysis and optimization of Czochralski laser oxide crystal growth Fang HS, Lin JZ, Zheng LL, Huang XM International Journal of Heat and Mass Transfer, 85, 505, 2015 |
4 |
Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot Li ZY, Liu LJ, Liu X, Zhang YF, Xiong JF Journal of Crystal Growth, 360, 87, 2012 |
5 |
Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals Noghabi OA, M'Hamdi M, Jomaa M Journal of Crystal Growth, 318(1), 173, 2011 |
6 |
Impact of the surface/interface on the ionic conductivity of thin film Gd-doped CeO2 Swanson M, Sunder M, Tangtrakarn N, Krishna L, Moran PD Solid State Ionics, 189(1), 45, 2011 |
7 |
Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO Seo SH, Nam WS, Kim JS, Lee SY, Shim TH, Park JG Current Applied Physics, 10(1), E32, 2010 |
8 |
Influence of the molecular weight of a polymer on the gliding of nematic liquid crystals Janossy I, Vajda A, Statman D Molecular Crystals and Liquid Crystals, 466, 77, 2007 |
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Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of radial temperature gradient Herro Z, Bickermann M, Epelbaum BM, Masri P, Winnacker A Materials Science Forum, 433-4, 67, 2002 |
10 |
Influence of melt convection on the interface during Czochralski crystal growth Miller W, Rehse U, Bottcher K Solid-State Electronics, 44(5), 825, 2000 |