검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 279, 2002 |
| 2 |
Growth of defect-free 3C-SiC on 4H-and 6H-SiC mesas using step-free surface heteroepitaxy Neudeck PG, Powell JA, Trunek AJ, Huang XRR, Dudley M Materials Science Forum, 389-3, 311, 2002 |