| 1 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T
Solid-State Electronics, 137, 1, 2017 |
| 2 |
Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors
Kaushik JK, Balakrishnan VR, Mongia D, Kumar U, Dayal S, Panwar BS, Muralidharan R
Thin Solid Films, 612, 147, 2016 |
| 3 |
Hot-electron reliability improvement using perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN HEMTs
Iqbal M, Ko PS, Kim SD
Current Applied Physics, 14(8), 1099, 2014 |
| 4 |
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
Zhou XY, Feng ZH, Wang L, Wang YG, Lv YJ, Dun SB, Cai SJ
Solid-State Electronics, 100, 15, 2014 |
| 5 |
Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN
Kobayashi K, Hatakeyama S, Yoshida T, Piedra D, Palacios T, Otsuji T, Suemitsu T
Solid-State Electronics, 101, 63, 2014 |
| 6 |
A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation
Tanaka T, Shiojima K, Otoki Y, Tokuda Y
Thin Solid Films, 557, 207, 2014 |
| 7 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K
Solid-State Electronics, 67(1), 74, 2012 |
| 8 |
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET
Valizadeh P, Alekseev E, Pavlidis D, Yun F, Morkoc H
Solid-State Electronics, 50(2), 282, 2006 |
| 9 |
Direct demonstration of the'virtual gate' mechanism for current collapse in AlGaN/GaN HFETs
Wells AM, Uren MJ, Balmer RS, Hilton KP, Martin T, Missous M
Solid-State Electronics, 49(2), 279, 2005 |
| 10 |
Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure
Inagaki T, Hashizume T, Hasegawa H
Applied Surface Science, 216(1-4), 519, 2003 |
