| 1 |
Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
Ding P, Chen C, Ding WC, Yang F, Su YB, Wang DH, Jin Z
Solid-State Electronics, 123, 1, 2016 |
| 2 |
FinFET and UTBB for RF SOI communication systems
Raskin JP
Solid-State Electronics, 125, 73, 2016 |
| 3 |
FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application
Wei X, Zhong J, Luo J, Wu H, Zhu HL, Zhao C, Yin HZ
Solid-State Electronics, 104, 116, 2015 |
| 4 |
Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs
Lu WF, Wang GY, Sun LL
Solid-State Electronics, 105, 63, 2015 |
| 5 |
Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistors
Liu M, Zhang YM, Lu HL, Zhang YM, Zhang JC, Wei ZC, Li CH
Solid-State Electronics, 96, 9, 2014 |
| 6 |
Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment
Lim JW, Ahn HK, Kim SI, Kang DM, Lee JM, Min BG, Lee SH, Yoon HS, Ju CW, Kim H, Mun JK, Nam ES, Park HM
Thin Solid Films, 547, 106, 2013 |
| 7 |
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
Dinh TV, Hong SM, Jungemann C
Solid-State Electronics, 60(1), 58, 2011 |
| 8 |
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Sibaja-Hernandez A, You SZ, Van Huylenbroeck S, Venegas R, De Meyer K, Decoutere S
Solid-State Electronics, 65-66, 72, 2011 |
| 9 |
Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications
Chen SM, Fang YK, Juang FR, Yeh WK, Chao CP, Tseng HC
Thin Solid Films, 519(1), 471, 2010 |
| 10 |
Fabrication and characteristics of polyfluorene based organic photodetectors using fullerene derivatives
Hamasaki T, Morimune T, Kajii H, Minakata S, Tsuruoka R, Nagamachi T, Ohmori Y
Thin Solid Films, 518(2), 548, 2009 |
