| 1 |
Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques
Garris RL, Johnston S, Li JV, Guthrey HL, Ramanathan K, Mansfield LM
Solar Energy Materials and Solar Cells, 174, 77, 2018 |
| 2 |
Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors
Schmidt F, von Wenckstern H, Breitenstein O, Pickenhain R, Grundmann M
Solid-State Electronics, 92, 40, 2014 |
| 3 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
Solid-State Electronics, 80, 19, 2013 |
| 4 |
Temperature dependent capacitance and DLTS studies of Ni/n-type 6H-SiC Schottky diode
Duman S, Gur E, Dogan S, Tuzemen S
Current Applied Physics, 9(6), 1181, 2009 |
| 5 |
A deconvolution of the transient response of (100) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: evidence of different branches of charge transition
Bayer R, Burghardt H, Thurzo I, Zahn DRT, Gessner T
Solid-State Electronics, 44(8), 1463, 2000 |
