검색결과 : 14건
No. | Article |
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1 |
Temperature-dependent OSL properties of nano-phosphors LiAlO2:C and alpha-Al2O3:C Agarwal M, Garg SK, Asokan K, Kumar P Applied Surface Science, 444, 819, 2018 |
2 |
Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime Cusumano P Solid-State Electronics, 116, 30, 2016 |
3 |
Deep level transient spectroscopy on charge traps in high-k ZrO2 Li HM, Zhang G, Yoo WJ Thin Solid Films, 518(22), 6382, 2010 |
4 |
Dependence of backgating on the type of deep centres in the substrate of GaAsFETs Sengouga N, Abdeslam NA Solid-State Electronics, 52(7), 1039, 2008 |
5 |
Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry Markov A, Biberin VI, Polyakov AY, Smirnov NB, Govorkov AV, Gavrin VN, Kalikhov AV, Kozlova JP, Veretenkin EP, Bowles TJ Solid-State Electronics, 51(7), 1039, 2007 |
6 |
Profiling of deep traps in silicon oxide-nitride-oxide structures Naich M, Rosenman G, Roizin Y Thin Solid Films, 471(1-2), 166, 2005 |
7 |
Positron trapping in deformed copper down to millikelvins Haaks M, Tramm C, Muller I, Staab T, Zamponi C, Herzog P, Maier K Materials Science Forum, 445-6, 96, 2004 |
8 |
Non-destructive deep trap diagnostics of epitaxial structures Gorev NB, Kodzhespirova I, Privalov EN, Khvedelidze L, Khuchua N, Peradze GG, Shur MS, Stevens K Solid-State Electronics, 47(9), 1569, 2003 |
9 |
Effect of substituted derivatives on carrier transport in organic polymers Kwok HHL Solid-State Electronics, 47(11), 2031, 2003 |
10 |
4H-SiC pn diode grown by LPE method for high power applications Kuznetsov N, Bauman D, Gavrilin A, Kassamakova L, Kakanakov R, Sarov G, Cholakova T, Zekentes K, Dmitriev V Materials Science Forum, 433-4, 867, 2002 |