| 1 |
Depth resolution and preferential sputtering in depth profiling of delta layers
Hofmann S, Lian SY, Han YS, Liu Y, Wang JY
Applied Surface Science, 455, 1045, 2018 |
| 2 |
The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
Protasov DY, Zhuravlev KS
Solid-State Electronics, 129, 66, 2017 |
| 3 |
Evaluation of sputtering rate change in the silicon transient region under medium energy O-2(+) sputtering
Takano A, Takenaka H
Applied Surface Science, 255(4), 1348, 2008 |
| 4 |
On determining accurate positions, separations, and internal profiles for delta layers
Dowsett MG, Kelly JH, Rowlands G, Ormsby TJ, Guzman B, Augustus P, Beanland R
Applied Surface Science, 203, 273, 2003 |
| 5 |
InAs delta-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
Hazdra P, Voves J, Oswald J, Hulicius E, Pangrac J, Simecek T
Journal of Crystal Growth, 248, 328, 2003 |
| 6 |
Profile reconstruction in sputter depth profiling
Hofmann S
Thin Solid Films, 398-399, 336, 2001 |
| 7 |
Strain Fields and Unit-Cell Deformation in High-T-C Superconductor Heterostructures
Gusso M, Decaro L, Tapfer L
Thin Solid Films, 302(1-2), 239, 1997 |
