검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition Kwak I, Kavrik M, Park JH, Grissom L, Fruhberger B, Wong KT, Kang S, Kummel AC Applied Surface Science, 463, 758, 2019 |
| 2 |
Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique Kolkovsky V, Stubner R, Langa S, Wende U, Kaiser B, Conrad H, Schenk H Solid-State Electronics, 123, 89, 2016 |
| 3 |
Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures Yoshida N, Waki E, Arai M, Yamasaki K, Han JH, Takenaka M, Takagi S Thin Solid Films, 557, 237, 2014 |
| 4 |
Hall effect in the channel of 3C-SiC MOSFETs Krieger M, Pensl G, Bakowski M, Schoner A, Nagasawa H, Abe M Materials Science Forum, 483, 441, 2005 |
| 5 |
Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation Ciobanu F, Pensl G, Afanas'ev VV, Schoner A Materials Science Forum, 483, 693, 2005 |
| 6 |
Evaluation of MOS structures processed on 4H-SiC layers grown by PVT epitaxy Ciechonski RR, Syvajarvi M, Wahab Q, Yakimova R Solid-State Electronics, 49(12), 1917, 2005 |
| 7 |
Barrier formation at metal-organic interfaces: dipole formation and the charge neutrality level Vazquez H, Flores F, Oszwaldowski R, Ortega J, Perez R, Kahn A Applied Surface Science, 234(1-4), 107, 2004 |
| 8 |
Cathodoluminescence study of Si/SiO2 interface structure Zamoryarskaya MV, Sokolov VI, Plotnikov V Applied Surface Science, 234(1-4), 214, 2004 |
| 9 |
The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes Altindal S, Karadeniz S, Tugluoglu N, Tataroglu A Solid-State Electronics, 47(10), 1847, 2003 |
| 10 |
Traps at the interface of 3C-SiC/SiO2-MOS-structures Ciobanu F, Pensl G, Nagasawa H, Schoner A, Dimitrijev S, Cheong KY, Afanas'ev VV, Wagner G Materials Science Forum, 433-4, 551, 2002 |