| 1 |
Measurement of band offsets and shunt resistance in CdTe solar cells through temperature and intensity dependence of open circuit voltage and photoluminescence
Swartz CH, Rab SR, Paul S, van Hest MFAM, Dou BJ, Luther JM, Pach GF, Grice CR, Li DB, Bista SS, LeBlanc EG, Reese MO, Holtz MW, Myers TH, Yan YF, Li JV
Solar Energy, 189, 389, 2019 |
| 2 |
Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G
Solid-State Electronics, 129, 150, 2017 |
| 3 |
Van-der-Pauw measurement on devices with four contacts and two orthogonal mirror symmetries
Ausserlechner U
Solid-State Electronics, 133, 53, 2017 |
| 4 |
Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90 degrees symmetric devices with four arbitrary contacts
Ausserlechner U
Solid-State Electronics, 116, 46, 2016 |
| 5 |
Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate
Kim S, Park MS, Geum DM, Kim H, Ryu G, Yang HD, Song JD, Kim CZ, Choi WJ
Current Applied Physics, 15, S40, 2015 |
| 6 |
Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
Simms RJT, Uren MJ, Martin T, Powell J, Forsberg U, Lundskog A, Kakanakova-Georgieva A, Janzen E, Kuball M
Solid-State Electronics, 55(1), 5, 2011 |
| 7 |
Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour
Donoval D, Vrbicky A, Marek J, Chvala A, Beno P
Solid-State Electronics, 52(6), 892, 2008 |
| 8 |
Accurate estimation of the nonlinearity of input/output response for color cameras
Cheung V, Westland S, Thomson M
Color Research and Application, 29(6), 406, 2004 |
| 9 |
An organic electrophosphorescent device driven by all-organic thin-film transistor using photoacryl as a gate insulator
Pyo SW, Kim YM, Kim JH, Shim JH, Jung LY, Kim YK
Current Applied Physics, 2(5), 417, 2002 |
| 10 |
A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs
Chen TP, Huang JY, Tse MS, Zeng X
Solid-State Electronics, 46(11), 2013, 2002 |
