화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell
Xu ZZ, Liu DH, Hu J, Chen WJ, Qian WS, Kong WR, Zou SC
Solid-State Electronics, 152, 46, 2019
2 Theoretical analysis and modeling for nanoelectronics
Baccarani G, Gnani E, Gnudi A, Reggiani S
Solid-State Electronics, 125, 2, 2016
3 Scaling projections for Sb-based p-channel FETs
Ancona MG, Bennett BR, Boos JB
Solid-State Electronics, 54(11), 1349, 2010
4 The revolution in SiGe: impact on device electronics
Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S
Applied Surface Science, 224(1-4), 9, 2004