검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S Journal of Crystal Growth, 310(23), 5232, 2008 |
| 2 |
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B Journal of Crystal Growth, 298, 826, 2007 |
| 3 |
Structural characterisation of GaAlN/GaN HEMT heterostructures Sarazin N, Durand O, Magis M, Poisson MADF, Di Persio J Applied Surface Science, 253(1), 228, 2006 |
| 4 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C Journal of Crystal Growth, 272(1-4), 305, 2004 |
| 5 |
LPMOCVD growth of GaN on silicon carbide di Forte-Poisson MA, Romann A, Tordjman M, Magis M, Di Persio J, Jacques C, Vicente P Journal of Crystal Growth, 248, 533, 2003 |
| 6 |
Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers Chauveau JM, Cordier Y, Kim HJ, Ferre D, Androussi Y, Di Persio J Journal of Crystal Growth, 251(1-4), 112, 2003 |
| 7 |
Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer di Forte-Poisson MA, Bernard S, Teisseire L, Brylinski C, Cassette S, di Persio J Journal of Crystal Growth, 221, 717, 2000 |
| 8 |
Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes Wahab Q, Ellison A, Hallin C, Henry A, Di Persio J, Martinez R, Janzen E Materials Science Forum, 338-3, 1175, 2000 |