| 1 |
Hydrophobic modification of SiO2 surface with disilanobiphenyl and disilanobithiophene and the application to pentacene-based organic transistors
Arase H, Kai T, Taniguchi S, Adachi Y, Ooyama Y, Mori T, Yanase M, Hayakawa S, Kunugi Y, Ohshita J
Composite Interfaces, 26(3), 221, 2019 |
| 2 |
&ITmeso&IT-Tetraaryl(porphyrinato)cobalt(III)-catalyzed Oxygenation of Disilanes under Aerobic Conditions
Ohshita J, Matsumura Y, Nakayama T, Yoshida H, Kunai A, Hisaeda Y, Hayashi T
Chemistry Letters, 46(12), 1807, 2017 |
| 3 |
Epitaxial growth of Si and SiGe at temperatures lower than 500 degrees C with disilane and germane
Aubin J, Hartmann JM, Benevent V
Thin Solid Films, 602, 36, 2016 |
| 4 |
Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe
Hartmann JM, Benevent V, Veillerot M, Halimaoui A
Thin Solid Films, 557, 19, 2014 |
| 5 |
A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers
Hartmann JM, Benevent V, Damlencourt JF, Billon T
Thin Solid Films, 520(8), 3185, 2012 |
| 6 |
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M
Thin Solid Films, 520(2), 730, 2011 |
| 7 |
Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
Adarn TN, Bedell S, Reznicek A, Sadana DK, Venkateshan A, Tsunoda T, Seino T, Nakatsuru J, Shinde SR
Journal of Crystal Growth, 312(23), 3473, 2010 |
| 8 |
Pulsed laser deposition of bioactive glass films in ammonia and disilane atmospheres
Borrajo JP, Gonzalez P, Liste S, Serra J, Chiussi S, Leon B, Perez-Amor M
Applied Surface Science, 248(1-4), 369, 2005 |
| 9 |
PECVD of hydrogenated silicon thin films from SiH4+H-2+Si2H6
Hammad A, Amanatides E, Mataras D, Rapakoulias D
Thin Solid Films, 451-52, 255, 2004 |
| 10 |
Si submonolayer and monolayer digital growth operation techniques using Si2H6 as atomically controlled growth nanotechnology
Suda Y, Hosoya N, Miki K
Applied Surface Science, 216(1-4), 424, 2003 |
