화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Dynamical study of dislocations and 4H -> 3C transformation induced by stress in (11-20) 4H-SiC
Idrissi H, Lancin M, Douin J, Regula G, Pichaud B
Materials Science Forum, 483, 299, 2005
2 Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy
Idrissi H, Lancin M, Regula G, Pichaud B
Materials Science Forum, 457-460, 355, 2004
3 사파이어( α - Al 2 O 3 ) 단결정에 있어 basal slip (0001)1/3 전위 Part I : 전위속도
윤석영, 이종영
Korean Journal of Materials Research, 11(3), 221, 2001