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| No. | Article |
|---|---|
| 1 |
Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy Steeds JW, Carosella F, Evans GA, Ismail MM, Danks LR, Voegeli W Materials Science Forum, 353-356, 381, 2001 |