검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC Schmid F, Frank T, Pensl G Materials Science Forum, 483, 641, 2005 |
| No. | Article |
|---|---|
| 1 |
Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC Schmid F, Frank T, Pensl G Materials Science Forum, 483, 641, 2005 |