검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Effects of dose on activation characteristics of P in Ge Anisuzzaman M, Sadoh T Thin Solid Films, 520(8), 3255, 2012 |
| 2 |
Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon Alford TL, Gadre MJ, Vemuri RNP, Theodore ND Thin Solid Films, 520(13), 4314, 2012 |
| 3 |
Non-melting annealing of silicon by CO2 laser Florakis A, Verrelli E, Giubertoni D, Tzortzis G, Tsoukalas D Thin Solid Films, 518(9), 2551, 2010 |
| 4 |
Hydrogen and helium interactions in Si: phenomena obscure and not-so-obscure Ashok S Applied Surface Science, 244(1-4), 2, 2005 |
| 5 |
Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: bistable, negative-U defects Gali A, Hornos T, Deak P, Son NT, Janzen E, Choyke WJ Materials Science Forum, 483, 519, 2005 |
| 6 |
Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs Kim DM, Kim DS, Ro JS Thin Solid Films, 475(1-2), 342, 2005 |
| 7 |
Quantitative high-resolution two-dimensional profiling of SiC by scanning capacitance microscopy Raineri V, Giannazzo F, Calcagno L, Musumeci P, Roccaforte F, La Via F Materials Science Forum, 389-3, 655, 2002 |
| 8 |
Carrier concentrations in implanted and epitaxial 4H-SiC by scanning spreading resistance microscopy Osterman J, Anand S, Linnarsson M, Hallen A Materials Science Forum, 389-3, 663, 2002 |
| 9 |
Activation study of implanted N+ in 6H-SiC by scanning capacitance microscopy Raineri V, Calcagno L, Giannazzo F, Goghero D, Musumeci F, Roccaforte F, La Via F Materials Science Forum, 433-4, 375, 2002 |
| 10 |
Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing Tseng CH, Lin CW, Teng TH, Chang TK, Cheng HC, Chin A Solid-State Electronics, 46(8), 1085, 2002 |