화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Deconvolution of very low primary energy SIMS depth profiles2w
Fares B, Gautier B, Dupuy JC, Prudon G, Holliger P
Applied Surface Science, 252(19), 6478, 2006
2 mu c-Si : H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate
Gordijn A, Francke J, Rath JK, Schropp REI
Thin Solid Films, 501(1-2), 338, 2006
3 Investigation of interface charges at the heterojunction discontinuity in HBT devices
de la Fuente JG, Krozer V
Solid-State Electronics, 46(9), 1273, 2002
4 Diagnostics of Si multi-delta-doped GaAs layers by Raman spectroscopy on bevelled structures
Srnanek R, Gurnik P, Harmatha L, Gregora I
Applied Surface Science, 183(1-2), 86, 2001
5 Laser doping in Si, InP and GaAs
Pokhmurska A, Bonchik O, Kiyak S, Savitski G, Gloskovsky A
Applied Surface Science, 154, 712, 2000