화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Almost completely dedoped electrochemically deposited luminescent films exhibiting excellent LED performance
Gu C, Tang S, Yang B, Liu SJ, Lv Y, Wang H, Yang SM, Hanif M, Lu D, Shen FZ, Ma YG
Electrochimica Acta, 54(27), 7006, 2009
2 From transport measurements to infrared reflectance spectra of n-type doped 4H-SiC layer stacks
Pernot J, Camassel J, Peyre H, Contreras S, Robert JL
Materials Science Forum, 433-4, 403, 2002
3 Shallow dopant and surface levels in 6H-SiC MOS structures studied by thermally stimulated current technique
Lysenko VS, Osiyuk IP, Rudenko TE, Tyagulski IP, Sveinbjornsson EO, Olafsson HO
Materials Science Forum, 353-356, 479, 2001
4 Field oxide thinning behavior in local oxidation of silicon process under enhanced oxidation conditions
Jang SA, Yeo IS, Kim YB
Journal of the Electrochemical Society, 145(5), 1664, 1998
5 Oxide-Growth Enhancement Related to Annealing-Induced Arsenic Accumulation in the Si/SiO2 Interface Region
Berger HH, Muller B, Jacob K
Journal of the Electrochemical Society, 143(1), L15, 1996
6 Oxide-Growth Enhancement on Highly N-Type Doped Silicon Under Steam Oxidation
Biermann E, Berger HH, Linke P, Muller B
Journal of the Electrochemical Society, 143(4), 1434, 1996
7 Impact of Reactive Ion Etching Induced Carbon Contamination on Oxidation of Silicon
Tsuchiaki M, Kvitek RJ, Parks C, Murphy RJ, Ohiwa T, Watanabe T
Journal of the Electrochemical Society, 143(7), 2378, 1996
8 Characteristics of the Thermal-Oxidation of Heavily Boron-Doped Polycrystalline Silicon Thin-Films
Boukezzata M, Bielledaspet D, Sarrabayrouse G, Mansour F
Thin Solid Films, 279(1-2), 145, 1996
9 Oxidation-Enhanced Diffusion of Boron and Phosphorus in Heavily-Doped Layers in Silicon
Roth DJ, Plummer JD
Journal of the Electrochemical Society, 141(4), 1074, 1994