| 1 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
Teng T, Xu AH, Ai LK, Sun H, Qi M
Journal of Crystal Growth, 378, 618, 2013 |
| 2 |
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
Teng T, Ai LK, Xu AH, Sun H, Zhu FY, Qi M
Journal of Crystal Growth, 323(1), 525, 2011 |
| 3 |
Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
Oudir A, Mahdouani M, Mansouri S, Bourguiga R, Pardo F, Pelouard JL
Solid-State Electronics, 54(1), 67, 2010 |
| 4 |
GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage
Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM
Solid-State Electronics, 46(1), 1, 2002 |
| 5 |
Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors
Li PW, Li NY, Hou HQ
Solid-State Electronics, 44(7), 1169, 2000 |
