검색결과 : 1건
No. | Article |
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1 |
Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y Applied Surface Science, 224(1-4), 104, 2004 |
No. | Article |
---|---|
1 |
Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y Applied Surface Science, 224(1-4), 104, 2004 |