화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Evaluation of the effective work-function of monolayer graphene on silicon dioxide by internal photoemission spectroscopy
Trepalin V, Asselberghs I, Brems S, Huyghebaert C, Radu I, Afanas'ev V, Houssa M, Stesmans A
Thin Solid Films, 674, 39, 2019
2 Reliable gate stack and substrate parameter extraction based on C-V measurements for 14 nm node FDSOI technology
Mohamad B, Leroux C, Rideau D, Haond M, Reimbold G, Ghibaudo G
Solid-State Electronics, 128, 10, 2017
3 Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface
Lee TI, Seo Y, Moon J, Ahn HJ, Yu HY, Hwang WS, Cho BJ
Solid-State Electronics, 130, 57, 2017
4 Effects of intrinsic defects on effective work function for Ni/HfO2 interfaces
Zhong KH, Xu GG, Zhang JM, Liao RY, Huang ZG
Materials Chemistry and Physics, 174, 41, 2016
5 Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T
Solid-State Electronics, 115, 26, 2016
6 Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide
Taweesup K, Yamamoto I, Chikyow T, Lothongkum G, Tsukagoshi K, Ohishi T, Tungasmita S, Visuttipitukul P, Ito K, Takahashi M, Nabatame T
Thin Solid Films, 598, 126, 2016
7 Effects of mechanical-bending and process-induced stresses on metal effective work function
Yang XD, Chu M, Huang AP, Thompson S
Solid-State Electronics, 79, 142, 2013
8 Quantitative relation between the thermionic contrast of metal surfaces and their degree of monocrystallization
Kawano H
Applied Surface Science, 257(9), 4344, 2011
9 Electrical and materials properties of AlN/HfO2 high-k stack with a metal gate
Reid KG, Dip A, Sasaki S, Triyoso D, Samavedam S, Gilmer D, Gondran CFH
Thin Solid Films, 517(8), 2712, 2009
10 Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks
Mizubayashi W, Akiyama K, Wang W, Ikeda M, Iwamoto K, Kamimuta Y, Hirano A, Ota H, Nabatame T, Toriumi A
Applied Surface Science, 254(19), 6123, 2008