화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Effect of Ti-rich TiN as a Co-salicide capping layer for 0.15 um embedded flash memory devices and beyond
Kim NS, Mukhopadhyay M, Wong WY, You YS, Zhao J, Lim B, Lee KS, Shukla D, Goh IS
Thin Solid Films, 504(1-2), 20, 2006
2 Design of high-speed 128-bit embedded flash memories allowing in place execution of the code
Combe M, Papaix C, Guichaoua J, Sialelli V, Racape E, Daga JM
Solid-State Electronics, 49(11), 1867, 2005