| 1 |
Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing
Huang SJ, Chou CW, Su YK, Lin JH, Yu HC, Chen DL, Ruan JL
Applied Surface Science, 401, 373, 2017 |
| 2 |
Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment
Zhong YZ, Yu Z, Gao HW, Dai SJ, He JL, Feng MX, Qian S, Zhang JJ, Zhao YF, An DS, Hui Y
Applied Surface Science, 420, 817, 2017 |
| 3 |
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Wang H, Wang N, Jiang LL, Zhao HY, Lin XP, Yu HY
Solid-State Electronics, 137, 52, 2017 |
| 4 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai JH, Liu WC
Solid-State Electronics, 105, 45, 2015 |
| 5 |
Enhancement-mode L-g=50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f(max) surpassing 408 GHz
Li M, Tang CW, Li H, Lau KM
Solid-State Electronics, 99, 7, 2014 |
| 6 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates
Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G
Thin Solid Films, 520(19), 6230, 2012 |
| 7 |
Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A
Solid-State Electronics, 54(11), 1291, 2010 |
| 8 |
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates
Nomura T, Kambayashi H, Niiyama Y, Otomo S, Yoshida S
Solid-State Electronics, 52(1), 150, 2008 |
| 9 |
Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study
Vitanov S, Palankovski V
Solid-State Electronics, 52(11), 1791, 2008 |
| 10 |
Development of GaAs-based MOSFET using molecular beam epitaxy
Droopad R, Rajagopalan K, Abrokwah J, Adams L, England N, Uebelhoer D, Fejes P, Zurcher P, Passlack M
Journal of Crystal Growth, 301, 139, 2007 |
