검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Relationship of the shape and size between etch pits and corresponding Te inclusions in CdZnTe crystals Zhang JJ, Zhu LH, Sun SW, Yu HX, Xu C, Yang JR Journal of Crystal Growth, 512, 90, 2019 |
| 2 |
Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing Yang X, Sun RY, Ohkubo Y, Kawai K, Arima K, Endo K, Yamamura K Electrochimica Acta, 271, 666, 2018 |
| 3 |
Temperature dependence of indentation size effect, dislocation pile-ups, and lattice friction in (001) strontium titanate Javaid F, Johanns KE, Patterson EA, Durst K Journal of the American Ceramic Society, 101(1), 356, 2018 |
| 4 |
3D Dislocation structure evolution in strontium titanate: Spherical indentation experiments and MD simulations Javaid F, Stukowski A, Durst K Journal of the American Ceramic Society, 100(3), 1134, 2017 |
| 5 |
MBE growth of PbSe thin film with a 9 x 10(5) cm(-2) etch-pits density on patterned (111)-oriented Si substrate Zhao F, Ma J, Weng B, Li D, Bi G, Chen A, Xu J, Shi Z Journal of Crystal Growth, 312(19), 2695, 2010 |
| 6 |
Removal of Si(111) wafer surface etch pits generated in ammonia-peroxide clean step Xiao ZW, Xu MX, Ohgi T, Onishi K, Fujita D Applied Surface Science, 221(1-4), 160, 2004 |
| 7 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ Materials Science Forum, 457-460, 169, 2004 |
| 8 |
Two-step epitaxial lateral overgrowth of GaN Ko CH, Su YK, Chang SJ, Tsai TY, Kuan TM, Lan WH, Lin JC, Lin WJ, Cherng YT, Webb JB Materials Chemistry and Physics, 82(1), 55, 2003 |
| 9 |
Growth 3nd evaluation of high quality SiC crystal by sublimation method Oyanagi N, Yamaguchi H, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 87, 2002 |
| 10 |
A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers Ha S, Vetter WM, Dudley M, Skowronski M Materials Science Forum, 389-3, 443, 2002 |