| 1 |
Origin of the dry etch damage in the short-channel oxide thin-film transistors for high resolution display application
Choi JH, Yang JH, Pi JE, Hwang CY, Kim HO, Hwang CS
Thin Solid Films, 674, 71, 2019 |
| 2 |
Damage-free reactive ion etch for high-efficiency large-area multi-crystalline silicon solar cells
Lee KS, Ha MH, Kim JH, Jeong JW
Solar Energy Materials and Solar Cells, 95(1), 66, 2011 |
| 3 |
Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H-2 plasmas
Stafford L, Lim WT, Pearton SJ, Song JI, Park JS, Heo YW, Lee JH, Kim JJ, Chicoine M, Schiettekatte F
Thin Solid Films, 516(10), 2869, 2008 |
| 4 |
Analysis of GaN etching damage by capacitively coupled RF Ar plasma exposure
Kawakami R, Inaoka T, Minamoto S, Kikuhara Y
Thin Solid Films, 516(11), 3478, 2008 |
| 5 |
Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O-2/Ar plasmas
Hsieh JT, Hwang JM, Hwang HL, Breitschadel O, Schweizer H
Applied Surface Science, 175, 450, 2001 |
| 6 |
Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas
Lee YJ, Hwang SW, Yeom GY, Lee JW, Lee JY
Thin Solid Films, 341(1-2), 168, 1999 |
| 7 |
Selectively Dry Gate Recessed GaAs Metal-Semiconductor Field-Effect Transistors, High-Electron-Mobility Transistors, and Monolithic Microwave Integrated-Circuits
Cameron NI, Ferguson S, Taylor MR, Beaumont SP, Holland M, Tronche C, Soulard M, Ladbrooke PH
Journal of Vacuum Science & Technology B, 11(6), 2244, 1993 |
