화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Development of plasma etching process for sub-50 nm TaN gate
Bliznetsov V, Kumar R, Bera LK, Yip LW, Du AY, Hui TE
Thin Solid Films, 504(1-2), 140, 2006
2 Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor
Franke D, Sabelfeld N, Ebert W, Harde P, Wolfram P, Grote N
Journal of Crystal Growth, 248, 421, 2003
3 Synthesis, growth and characterization of nonlinear optical material: L-arginine fluoride
Hameed ASH, Anandan P, Jayavel R, Ramasamy P, Ravi G
Journal of Crystal Growth, 249(1-2), 316, 2003
4 Backside etching of UV-transparent materials at the interface to liquids
Bohme R, Braun A, Zimmer K
Applied Surface Science, 186(1-4), 276, 2002
5 Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs
Lee JW, Jeon MH, Devre M, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F, Shul RJ
Solid-State Electronics, 45(9), 1683, 2001