검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 mu m bulk CMOS technology Koricic M, Suligoj T, Mochizuki H, Morita S, Shinomura K, Imai H Solid-State Electronics, 54(10), 1166, 2010 |
| 2 |
A 4H-SiC BJT with an epitaxially regrown extrinsic base layer Danielsson E, Domeij M, Lee HS, Zetterling CM, Ostling M, Schoner A, Hallin C Materials Science Forum, 483, 905, 2005 |
| 3 |
Influence of the extrinsic base on the base current kink in SiGeBJTs Sadovnikov A, Krakowski T, El-Diwany M Applied Surface Science, 224(1-4), 320, 2004 |