| 1 |
Multilevel Data Storage Memory Using Deterministic Polarization Control
Lee D, Yang SM, Kim TH, Jeon BC, Kim YS, Yoon JG, Lee HN, Baek SH, Eom CB, Noh TW
Advanced Materials, 24(3), 402, 2012 |
| 2 |
An XPS study and electrical properties of Pb1.1Zr0.53Ti0.47O3/PbO/Si (MRS) structures according to the substrate temperature of the PbO buffer layer
Park CH, Won MS, Oh YH, Son YG
Applied Surface Science, 252(5), 1988, 2005 |
| 3 |
Effect of Bi4Ti3O12 seeding layer on the structural and ferroelectric properties of Bi3.25La0.75TiO12 thin films fabricated by a metalorganic decomposition method
Kim KT, Kim CI
Thin Solid Films, 447, 413, 2004 |
| 4 |
강유전체 Bi3.25La0.75Ti3O12 박막의 증착에 대한 결정화 공정의 영향
김혜인, 윤진구, 정지원
Journal of the Korean Industrial and Engineering Chemistry, 14(3), 287, 2003 |
| 5 |
Plasma-induced damage in PZT thin films etched by inductively coupled plasma
Kang MG, Kim KT, Kim CI
Thin Solid Films, 435(1-2), 222, 2003 |
| 6 |
The problems originating from the grain boundaries in dielectric storage capacitors
Lee JS, Joo SK
Solid-State Electronics, 46(10), 1651, 2002 |
| 7 |
Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications
Lim DG, Kwak DJ, Yi JS
Thin Solid Films, 422(1-2), 150, 2002 |
| 8 |
Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process
Lim DG, Jang BS, Moon SI, Won CY, Yi J
Solid-State Electronics, 45(7), 1159, 2001 |
| 9 |
Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties
Ishikawa K, Watanabe T, Funakubo H
Thin Solid Films, 392(1), 128, 2001 |
